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DATA SHEET
book, halfpage
M3D123
BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors
Product specification Supersedes data of August 1995 1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
FEATURES * Low current consumption (100 A to 1 mA) * Low noise figure * Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain noise figure Ts 85 C IC = 0.5 mA; VCE = 1 V IC = 0; VCE = 1 V; f = 1 MHz open emitter open base CONDITIONS PINNING PIN BFG25AW 1 2 3 4 collector base emitter emitter DESCRIPTION
BFG25AW; BFG25AW/X
fpage
4
3
1 Top view
2
MBK523
BFG25AW/X 1 2 3 4 collector emitter base emitter
Fig.1 SOT343N.
MARKING TYPE NUMBER BFG25AW BFG25AW/X CODE N6 V1
MIN. - - - - 50 - - -
TYP. - - - - 80 0.2 5 16 2
MAX. UNIT 8 5 6.5 500 200 0.3 - - - pF GHz dB dB V V mA mW
IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C 3.5 IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C s = opt; IC = 1 mA; VCE = 1 V; f = 1 GHz
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. 1998 Sep 23 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 85 C; see Fig.2; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. 8 5 2 6.5 500 +150 175 MAX. V V V mA mW C C UNIT
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC = 100 A; IE = 0 IE = 100 A; IC = 0 PARAMETER
BFG25AW; BFG25AW/X
CONDITIONS
VALUE 180
UNIT K/W
thermal resistance from junction to soldering point Ts 85 C; note 1
MIN. - - - - 50 - 3.5 - - - -
TYP. - - - - 80 0.2 5 16 8 1.9 2
MAX. 8 5 2 50 200 0.3 - - - -
UNIT V V V nA pF GHz dB dB dB dB
collector-emitter breakdown voltage IC = 1 mA; IB = 0 open emitter; VCB = 5 V; IE = 0 IC = 0.5 mA; VCE = 1 V IC = 0; VCE = 1 V; f = 1 MHz IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C IC = 0.5 mA; VCE = 1 V; f = 2 GHz; Tamb = 25 C
F
noise figure
s = opt; IC = 0.5 mA; VCE = 1 V; f = 1 GHz s = opt; IC = 1 mA; VCE = 1 V; f = 1 GHz
Note
S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------- dB. ( 1 - S 11 2 ) ( 1 - S 22 2 )
1998 Sep 23
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
handbook, halfpage
600
MBG248
handbook, halfpage
100
MCD138
P tot (mW) 400
h FE 80
60
40 200 20
0 0 50 100 150 T s ( C)
o
200
0 10 3
10 2
10 1
1
I C (mA)
10
VCE = 1 V.
Fig.3 Fig.2 Power derating curve.
DC current gain as a function of collector current; typical values.
handbook, halfpage
0.3
MLB971
handbook, halfpage
6
MLB972
Cre (pF) 0.2
fT (GHz) 4
0.1
2
0 0 2 4 VCE (V) 6
0 0 1 2 3 I (mA) 4 C
IC = 0; f = 1 MHz.
f = 500 MHz; VCE = 1 V; Tamb = 25 C.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
Fig.5
Transition frequency as a function of collector current; typical values.
1998 Sep 23
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
handbook, halfpage
30
MLB973
handbook, halfpage
30
MLB974
gain (dB) 20 G UM MSG
gain (dB) 20
G UM MSG 10 10
0
0
1
0 2 I C (mA) 3
0
1
2 I C (mA)
3
f = 500 MHz; VCE = 1 V.
f = 1 GHz; VCE = 1 V.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of collector current; typical values.
handbook, halfpage
50
MLB975
gain (dB)
handbook, halfpage
50
MLB976
gain (dB)
40
G UM
40
G UM
30 MSG 20
30 MSG 20
10
10
0 10 10
2
0 10
3
f (MHz)
10
4
10
10
2
10
3
f (MHz)
10
4
IC = 0.5 mA; VCE = 1 V.
IC = 1 mA; VCE = 1 V.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Gain as a function of frequency; typical values.
1998 Sep 23
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
handbook, halfpage
4
MCD145
handbook, halfpage
4
MCD146
F (dB) 3 f = 2 GHz 1 GHz 500 MHz 2
F (dB) 3 IC = 2 mA
1 mA 2 0.5 mA
1
1
0 10-1
1
IC (mA)
10
0 102
103
f (MHz)
104
VCE = 1 V.
VCE = 1 V.
Fig.10 Minimum noise figure as a function of collector current; typical values.
Fig.11 Minimum noise figure as a function of frequency; typical values.
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 0o 0
0.2 F min = 1.9 dB 180 o 0 0.2 0.5 1 2 5 F = 3 dB F = 4 dB 0.2 F = 5 dB
5
opt
5
0.5 135 o 1
2
45 o
MLB977
1.0
90 o f = 500 MHz; VCE = 1 V; IC = 1 mA; Zo = 50 .
Fig.12 Common emitter noise figure circles; typical values.
1998 Sep 23
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o stability circle 0.2 F min = 2.0 dB 180 o 0.2 0.5 1 2 F = 3 dB F = 4 dB F = 5 dB 0.2 5 5 opt 0o 5 0.8 0.6 0.4 0.2 0
0
0.5 135 o 1
2
45 o
MLB978
1.0
90 o f = 1 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 .
Fig.13 Common emitter noise figure circles; typical values.
90 o
handbook, full pagewidth
1 135 o 0.5 2 F = 5 dB F = 4 dB F = 3 dB opt F min = 2.4 dB
stability circle 45 o
1.0 0.8 0.6 0.4 0.2
0.2 unstable region 180 o 0 0.2 0.5 1
5
2
5
0o
0
0.2
5
0.5 135 o 1
2
45 o
MLB979
1.0
90 o f = 2 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 .
Fig.14 Common emitter noise figure circles; typical values.
1998 Sep 23
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 40 MHz 0o 0
0.2
5
0.2
3 GHz
5
0.5 135 o 1
2
45 o
MLB980
1.0
90 o VCE = 1 V; IC = 1 mA; Zo = 50 ..
Fig.15 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
3 GHz 180 o 40 MHz 5 4 3 2 1 0o
135 o
45 o
90 o VCE = 1 V; IC = 1 mA.
MLB981
Fig.16 Common emitter forward transmission coefficient (S21); typical values. 1998 Sep 23 8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
180 o
0.5
0.4
0.3
0.2
0.1
40 MHz
0o
135 o
45 o
90 o VCE = 1 V; IC = 1 mA.
MLB982
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 40 MHz 0o 0
0.2
5
0.2
5
3 GHz 0.5 135 o 1
MLB983
2
45 o 1.0
90 o VCE = 1 V; IC = 1 mA; Zo = 50 .
Fig.18 Common emitter output reflection coefficient (S22); typical values. 1998 Sep 23 9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
SPICE parameters for the BFG25W crystal SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35
(1)
BFG25AW; BFG25AW/X
PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS
VALUE 13.77 85.65 0.980 50.80 10.00 2.199 1.857 16.97 0.986 2.491 188.0 205.1 1.107 80.00 1.000 80.00 7.911 5.300 0.000 1.110 3.000 223.0 669.7 0.060 5.112 7.909 1.338 5.662 15.37 229.0 394.7 0.043 0.050 13.26 0.000 - - V A
UNIT aA
SEQUENCE No. 36(1) 37(1) 38 Note
PARAMETER VJS MJS FC
VALUE 750.0 0.000 0.988 - -
UNIT mV
fA - - - V mA aA - A - eV - fF mV - ps - V mA deg fF mV - - ns F
1. These parameters have not been extracted, the default values are shown.
handbook, halfpage
C cb
L1 B
LB B' E' LE C'
L2 C
C be
Cce
MBC964
L3
E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz.
Fig.19 Package equivalent circuit SOT343N.
List of components (see Fig.19) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 70 50 115 0.34 0.10 0.25 0.40 0.40 VALUE fF fF fF nH nH nH nH nH UNIT
1998 Sep 23
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
PACKAGE OUTLINES Plastic surface mounted package; 4 leads
BFG25AW; BFG25AW/X
SOT343N
D
B
E
A
X
y
HE e
vMA
4
3
Q
A A1 c
1
b1 e1 bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343N
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
1998 Sep 23
11
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG25AW; BFG25AW/X
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Sep 23
12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
NOTES
BFG25AW; BFG25AW/X
1998 Sep 23
13
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
NOTES
BFG25AW; BFG25AW/X
1998 Sep 23
14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
NOTES
BFG25AW; BFG25AW/X
1998 Sep 23
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/03/pp16
Date of release: 1998 Sep 23
Document order number:
9397 750 04352

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